XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface

J. Szuber; E. Bergignat; G. Hollinger; A. Polakowska; P. Kościelniak

doi:10.1016/S0042-207X(02)00193-8

XPS study of the surface Fermi level of (NH₄)₂S_x-passivated GaAs(1 0 0) surface

J. Szuber
, E. Bergignat
, G. Hollinger
, A. Polakowska
, P. Kościelniak

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Lyon-UMR CNRS 5512
Silesian University of Technology

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

28 Cytowania z bazy Scopus

Abstrakt

In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH₄)₂S_x solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap E_F-E_v after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

Język oryginału	angielski
Strony (od–do)	53-58
Liczba stron	6
Czasopismo	Vacuum
Tom	67
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/S0042-207X(02)00193-8
Status publikacji	Opublikowano - 2 wrz 2002
Wydarzenie	2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Polska Czas trwania: 10 wrz 2001 → 13 wrz 2001

Obszary tematyczne ASJC Scopus

Instrumentacja
Fizyka materii skondensowanej
Powierzchnie, powłoki i filmy

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10.1016/S0042-207X(02)00193-8

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@article{45febac7503e402c8b3d3fd7598cf24f,

title = "XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface",

abstract = "In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.",

keywords = "Gallium arsenide surface, Passivation, Sulfidation, X-ray photoelectron spectroscopy",

author = "J. Szuber and E. Bergignat and G. Hollinger and A. Polakowska and P. Ko{\'s}cielniak",

year = "2002",

month = sep,

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doi = "10.1016/S0042-207X(02)00193-8",

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pages = "53--58",

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TY - JOUR

T1 - XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface

AU - Szuber, J.

AU - Bergignat, E.

AU - Hollinger, G.

AU - Polakowska, A.

AU - Kościelniak, P.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

AB - In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

KW - Gallium arsenide surface

KW - Passivation

KW - Sulfidation

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/0037009209

U2 - 10.1016/S0042-207X(02)00193-8

DO - 10.1016/S0042-207X(02)00193-8

M3 - Conference article

AN - SCOPUS:0037009209

SN - 0042-207X

VL - 67

SP - 53

EP - 58

JO - Vacuum

JF - Vacuum

IS - 1

T2 - 2nd International Seminar On Semiconductor Surface Passivation (SSP'2001)

Y2 - 10 September 2001 through 13 September 2001

ER -