Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

Piotr Legutko

doi:10.15199/48.2016.04.07

Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

Piotr Legutko

Katedra Energoelektroniki, Napędu Elektrycznego i Robotyki (RE/RE5)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

6 Cytowania z bazy Scopus

Abstrakt

This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances L_DR, capacities C_OUT and resistances R_DR) for all drivers.

Przetłumaczony tytuł wkładu	The low-losses and fast switching hybrid drivers for DE series MOSFET transistors
Język oryginału	polski
Strony (od–do)	132-136
Liczba stron	5
Czasopismo	Przeglad Elektrotechniczny
Tom	92
Numer wydania	4
Identyfikatory DOI	https://doi.org/10.15199/48.2016.04.07
Status publikacji	Opublikowano - 1 mar 2016

Słowa kluczowe

High frequency drivers
MOSFET transistor
Parasitic parameters
Power losses
Resonant inverter
Thermal clad

Obszary tematyczne ASJC Scopus

Inżynieria elektryczna i elektroniczna

Uzyskaj dostęp do dokumentu

10.15199/48.2016.04.07

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Cytowanie

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title = "Wysokocz{\c e}stotliwo{\'s}ciowe, dyskretne drajwery ma{\l}ej mocy dedykowane do tranzystor{\'o}w MOSFET serii DE",

abstract = "This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.",

keywords = "High frequency drivers, MOSFET transistor, Parasitic parameters, Power losses, Resonant inverter, Thermal clad",

author = "Piotr Legutko",

year = "2016",

month = mar,

day = "1",

doi = "10.15199/48.2016.04.07",

language = "polski",

volume = "92",

pages = "132--136",

journal = "Przeglad Elektrotechniczny",

issn = "0033-2097",

publisher = "Wydawnictwo SIGMA-NOT",

number = "4",

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TY - JOUR

T1 - Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

AU - Legutko, Piotr

PY - 2016/3/1

Y1 - 2016/3/1

N2 - This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.

AB - This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.

KW - High frequency drivers

KW - MOSFET transistor

KW - Parasitic parameters

KW - Power losses

KW - Resonant inverter

KW - Thermal clad

UR - https://www.scopus.com/pages/publications/84964063170

U2 - 10.15199/48.2016.04.07

DO - 10.15199/48.2016.04.07

M3 - Artykuł

AN - SCOPUS:84964063170

SN - 0033-2097

VL - 92

SP - 132

EP - 136

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 4

ER -

Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

Abstrakt

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Obszary tematyczne ASJC Scopus

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