Weryfikacja mocy strat w obwodzie bramkowym wybranych tranzystorów MOSFET na bazie Si i SiC

Measurement results of power losses in the gate circuit in Si: APT5010JFLL, IXFN44N80P and SiC: APT40SM120J MOSFET transistors are presented in the paper. Measurements were taken in class DE inverter configuration in frequency range from 275 kHz to 525 kHz and with inverter supply voltage E=0 V and E=300 V. The article contains also the comparison of evaluated power loss values, based on datasheets, with laboratory results. (Verification of power losses in the gate circuit in selected MOSFET transistors based on Si and SiC).