The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

J. Szuber

doi:10.1016/0039-6028(89)90289-6

The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

J. Szuber

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

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Abstrakt

Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level E_F and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

Język oryginału	angielski
Strony (od–do)	294-302
Liczba stron	9
Czasopismo	Surface Science
Tom	213
Numer wydania	2-3
Identyfikatory DOI	https://doi.org/10.1016/0039-6028(89)90289-6
Status publikacji	Opublikowano - 3 kwi 1989

Obszary tematyczne ASJC Scopus

Fizyka materii skondensowanej
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Chemia materiałowa

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10.1016/0039-6028(89)90289-6

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title = "The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface",

abstract = "Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.",

author = "J. Szuber",

year = "1989",

month = apr,

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doi = "10.1016/0039-6028(89)90289-6",

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AU - Szuber, J.

PY - 1989/4/3

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N2 - Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

AB - Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

UR - https://www.scopus.com/pages/publications/45149142495

U2 - 10.1016/0039-6028(89)90289-6

DO - 10.1016/0039-6028(89)90289-6

M3 - Article

AN - SCOPUS:45149142495

SN - 0039-6028

VL - 213

SP - 294

EP - 302

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

Abstrakt

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