The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Krzysztof Bernacki; Zbigniew Rymarski

doi:10.3390/en16020870

The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Katedra Elektroniki, Elektrotechniki i Mikroelektroniki (RAU/RAU11)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

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Abstrakt

The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

Język oryginału	angielski
Numer artykułu	870
Czasopismo	Energies
Tom	16
Numer wydania	2
Identyfikatory DOI	https://doi.org/10.3390/en16020870
Status publikacji	Opublikowano - sty 2023

Obszary tematyczne ASJC Scopus

Energia odnawialna, zrównoważony rozwój i środowisko
Budownictwo
Technologia paliwowa
Inżynieria (różne)
Inżynieria energetyczna i technologia energetyczna
Energia (różne)
Sterowanie i optymalizacja
Inżynieria elektryczna i elektroniczna

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10.3390/en16020870

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title = "The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise",

abstract = "The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.",

keywords = "near-field interferences, power spectral density, radiation noise, voltage source inverter, wide-band-gap transistors",

author = "Krzysztof Bernacki and Zbigniew Rymarski",

note = "Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = jan,

doi = "10.3390/en16020870",

language = "English",

volume = "16",

journal = "Energies",

issn = "1996-1073",

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T1 - The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

AU - Bernacki, Krzysztof

AU - Rymarski, Zbigniew

PY - 2023/1

Y1 - 2023/1

N2 - The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

AB - The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

KW - near-field interferences

KW - power spectral density

KW - radiation noise

KW - voltage source inverter

KW - wide-band-gap transistors

UR - https://www.scopus.com/pages/publications/85146714099

U2 - 10.3390/en16020870

DO - 10.3390/en16020870

M3 - Article

AN - SCOPUS:85146714099

SN - 1996-1073

VL - 16

JO - Energies

JF - Energies

IS - 2

M1 - 870

ER -

The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

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