Temperature dependence of the energy gap of inxSe1-x compounds

Anna Michalewicz; Marian Nowak; Mirosława Kȩpińska

doi:10.1002/pssb.200541055

Temperature dependence of the energy gap of in_xSe_1-x compounds

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Abstrakt

The optical absorption for photon energies of In_xSe _1-x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hv = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used.

Język oryginału	angielski
Strony (od–do)	685-689
Liczba stron	5
Czasopismo	Physica Status Solidi (B): Basic Research
Tom	243
Numer wydania	3
Identyfikatory DOI	https://doi.org/10.1002/pssb.200541055
Status publikacji	Opublikowano - mar 2006

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Fizyka materii skondensowanej

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10.1002/pssb.200541055

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Cytowanie

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AB - The optical absorption for photon energies of InxSe 1-x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hv = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used.

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