Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

Marian Nowak; Piotr Szperlich

doi:10.1016/j.optmat.2013.01.020

Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

Marian Nowak
, Piotr Szperlich

Zakład Fizyki Ciała Stałego (RIF/RIF1)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

24 Cytowania z bazy Scopus

Abstrakt

For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < T_c = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by E_gfI(T) = [2.195(3) - 10.8(1) × 10^-4T] eV. In paraelectric phase (T_c = 292 K < T < 344 K) the energy gap has been described by E_gfI(T) = [2.152(4) - 9.3(1) × 10^-4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m².

Język oryginału	angielski
Strony (od–do)	1200-1206
Liczba stron	7
Czasopismo	Optical Materials
Tom	35
Numer wydania	6
Identyfikatory DOI	https://doi.org/10.1016/j.optmat.2013.01.020
Status publikacji	Opublikowano - kwi 2013

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Informatyka ogólna
Fizyka atomowa i molekularna oraz optyka
Spektroskopia
Chemia fizyczna i teoretyczna
Chemia organiczna
Chemia nieorganiczna
Inżynieria elektryczna i elektroniczna

Uzyskaj dostęp do dokumentu

10.1016/j.optmat.2013.01.020

Inne pliki i linki

Link do publikacji w Scopus

Cytowanie

@article{ae39aca2e5cc41eaa3f73ef75ca09b80,

title = "Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires",

abstract = "For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < Tc = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by EgfI(T) = [2.195(3) - 10.8(1) × 10-4T] eV. In paraelectric phase (Tc = 292 K < T < 344 K) the energy gap has been described by EgfI(T) = [2.152(4) - 9.3(1) × 10-4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m2.",

keywords = "Antimony sulfoiodide, Ferroelectrics, Nanowires, Optical energy gap, Semiconductors",

author = "Marian Nowak and Piotr Szperlich",

year = "2013",

month = apr,

doi = "10.1016/j.optmat.2013.01.020",

language = "English",

volume = "35",

pages = "1200--1206",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier B.V.",

number = "6",

}

TY - JOUR

T1 - Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

AU - Nowak, Marian

AU - Szperlich, Piotr

PY - 2013/4

Y1 - 2013/4

N2 - For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < Tc = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by EgfI(T) = [2.195(3) - 10.8(1) × 10-4T] eV. In paraelectric phase (Tc = 292 K < T < 344 K) the energy gap has been described by EgfI(T) = [2.152(4) - 9.3(1) × 10-4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m2.

AB - For the first time temperature dependence of optical energy gap of antimony sulfoiodide (SbSI) nanowires has been determined. In ferroelectric phase (for 241 K < T < Tc = 292 K) the evaluated indirect forbidden optical energy gap has been fitted by EgfI(T) = [2.195(3) - 10.8(1) × 10-4T] eV. In paraelectric phase (Tc = 292 K < T < 344 K) the energy gap has been described by EgfI(T) = [2.152(4) - 9.3(1) × 10-4T] eV. It has been estimated that at the temperature of 240 K the spontaneous polarization of the SbSI nanowires has the maximum value of about 0.08 C/m2.

KW - Antimony sulfoiodide

KW - Ferroelectrics

KW - Nanowires

KW - Optical energy gap

KW - Semiconductors

UR - https://www.scopus.com/pages/publications/84875466952

U2 - 10.1016/j.optmat.2013.01.020

DO - 10.1016/j.optmat.2013.01.020

M3 - Article

AN - SCOPUS:84875466952

SN - 0925-3467

VL - 35

SP - 1200

EP - 1206

JO - Optical Materials

JF - Optical Materials

IS - 6

ER -

Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowires

Abstrakt

Obszary tematyczne ASJC Scopus

Uzyskaj dostęp do dokumentu

Inne pliki i linki

Fingerprint

Cytowanie