Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

J. Szuber

doi:10.1016/0040-6090(84)90458-9

Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

J. Szuber

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

3 Cytowania z bazy Scopus

Abstrakt

Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10^-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level E_F was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

Język oryginału	angielski
Strony (od–do)	309-312
Liczba stron	4
Czasopismo	Thin Solid Films
Tom	112
Numer wydania	4
Identyfikatory DOI	https://doi.org/10.1016/0040-6090(84)90458-9
Status publikacji	Opublikowano - 24 lut 1984

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Metale i stopy
Chemia materiałowa

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10.1016/0040-6090(84)90458-9

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title = "Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen",

abstract = "Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.",

author = "J. Szuber",

year = "1984",

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day = "24",

doi = "10.1016/0040-6090(84)90458-9",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

AU - Szuber, J.

PY - 1984/2/24

Y1 - 1984/2/24

N2 - Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

AB - Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

UR - https://www.scopus.com/pages/publications/0021375356

U2 - 10.1016/0040-6090(84)90458-9

DO - 10.1016/0040-6090(84)90458-9

M3 - Article

AN - SCOPUS:0021375356

SN - 0040-6090

VL - 112

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EP - 312

JO - Thin Solid Films

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IS - 4

ER -

Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

Abstrakt

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