Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

J. Szuber

doi:10.1016/0040-6090(84)90313-4

Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

J. Szuber

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

1 Cytowanie z bazy Scopus

Abstrakt

Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10^-4 Pa over the temperature range 500-700 K and of those exposed to O₂. The influence of both the annealing temperature and the O₂ adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level E_F and the top of the valence band was determined.

Język oryginału	angielski
Strony (od–do)	27-31
Liczba stron	5
Czasopismo	Thin Solid Films
Tom	115
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/0040-6090(84)90313-4
Status publikacji	Opublikowano - 4 maj 1984

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Metale i stopy
Chemia materiałowa

Uzyskaj dostęp do dokumentu

10.1016/0040-6090(84)90313-4

Inne pliki i linki

Link do publikacji w Scopus

Cytowanie

@article{821a6475eacf46c19dcc55b13fbe3fe2,

title = "Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum",

abstract = "Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.",

author = "J. Szuber",

year = "1984",

month = may,

day = "4",

doi = "10.1016/0040-6090(84)90313-4",

language = "English",

volume = "115",

pages = "27--31",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

AU - Szuber, J.

PY - 1984/5/4

Y1 - 1984/5/4

N2 - Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.

AB - Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.

UR - https://www.scopus.com/pages/publications/0021754928

U2 - 10.1016/0040-6090(84)90313-4

DO - 10.1016/0040-6090(84)90313-4

M3 - Article

AN - SCOPUS:0021754928

SN - 0040-6090

VL - 115

SP - 27

EP - 31

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

Abstrakt

Obszary tematyczne ASJC Scopus

Uzyskaj dostęp do dokumentu

Inne pliki i linki

Fingerprint

Cytowanie