Abstrakt
Purpose: The paper presents the results of investigations on the changes in surface morphology, roughness, and thickness of the prepared aluminium oxide thin films as dependent on conditions of the thin films preparation. Design/methodology/approach: Thin films have been prepared with use of atomic layer deposition (ALD) method. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM). Obtained roughness parameters have been calculated with XEI Park Systems software. The thickness distribution have been measured with spectroscopic ellipsometry. The optical transmission spectra have been measured with UV-Vis spectrophotometry. Findings: Results and their analysis show that the atomic layer deposition method allows the deposition of homogenous thin films of Al2O3 with the desired geometric characteristics and good optical properties. Practical implications: The technology of atomic layer deposition of aluminium oxide thin films causes that mentioned thin films are good potential material for optics, optoelectronics and photovoltaics.
| Język oryginału | angielski |
|---|---|
| Strony (od–do) | 18-24 |
| Liczba stron | 7 |
| Czasopismo | Archives of Materials Science and Engineering |
| Tom | 73 |
| Numer wydania | 1 |
| Status publikacji | Opublikowano - maj 2015 |
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Obszary tematyczne ASJC Scopus
- Materiałoznawstwo ogólne
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