Surface and bulk values of real part of refractive index of GaSe

M. Kȩpińska; R. Murri; M. Nowak

doi:10.1016/S0042-207X(02)00191-4

Surface and bulk values of real part of refractive index of GaSe

M. Kȩpińska
, R. Murri
, M. Nowak

Zakład Fizyki Ciała Stałego (RIF/RIF1)

University of Camerino

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

5 Cytowania z bazy Scopus

Abstrakt

Optical transmittance and reflectance of crystalline gallium selenide (GaSe) pallets of different thicknesses had been determined for various photon energies (from 1.1 to 2.8 eV) as well as for different polarisations and angles of incidence upon a sample. Fitting of these results with appropriate formulae allowed us to determine values of real parts of refractive indices at the surface as well as in the bulk of the investigated material. Also the values of absorption coefficients had been determined. Values of these parameters for light with the electric vector parallel and perpendicular to the c-axis of the GaSe had been evaluated. The absorption mechanism had been recognised and the values of direct and indirect energy gaps as well as exciton energies had been found by fitting the spectral dependencies of optical parameters.

Język oryginału	angielski
Strony (od–do)	143-147
Liczba stron	5
Czasopismo	Vacuum
Tom	67
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/S0042-207X(02)00191-4
Status publikacji	Opublikowano - 2 wrz 2002
Wydarzenie	2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Polska Czas trwania: 10 wrz 2001 → 13 wrz 2001

Obszary tematyczne ASJC Scopus

Instrumentacja
Fizyka materii skondensowanej
Powierzchnie, powłoki i filmy

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10.1016/S0042-207X(02)00191-4

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Cytowanie

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title = "Surface and bulk values of real part of refractive index of GaSe",

abstract = "Optical transmittance and reflectance of crystalline gallium selenide (GaSe) pallets of different thicknesses had been determined for various photon energies (from 1.1 to 2.8 eV) as well as for different polarisations and angles of incidence upon a sample. Fitting of these results with appropriate formulae allowed us to determine values of real parts of refractive indices at the surface as well as in the bulk of the investigated material. Also the values of absorption coefficients had been determined. Values of these parameters for light with the electric vector parallel and perpendicular to the c-axis of the GaSe had been evaluated. The absorption mechanism had been recognised and the values of direct and indirect energy gaps as well as exciton energies had been found by fitting the spectral dependencies of optical parameters.",

keywords = "Gallium selenide, Interference spectroscopy of optical transmittance and reflectance, Optical parameters, Surface and bulk refractive indices, VAR",

author = "M. Kȩpi{\'n}ska and R. Murri and M. Nowak",

year = "2002",

month = sep,

day = "2",

doi = "10.1016/S0042-207X(02)00191-4",

language = "English",

volume = "67",

pages = "143--147",

journal = "Vacuum",

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number = "1",

note = "2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) ; Conference date: 10-09-2001 Through 13-09-2001",

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TY - JOUR

T1 - Surface and bulk values of real part of refractive index of GaSe

AU - Kȩpińska, M.

AU - Murri, R.

AU - Nowak, M.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - Optical transmittance and reflectance of crystalline gallium selenide (GaSe) pallets of different thicknesses had been determined for various photon energies (from 1.1 to 2.8 eV) as well as for different polarisations and angles of incidence upon a sample. Fitting of these results with appropriate formulae allowed us to determine values of real parts of refractive indices at the surface as well as in the bulk of the investigated material. Also the values of absorption coefficients had been determined. Values of these parameters for light with the electric vector parallel and perpendicular to the c-axis of the GaSe had been evaluated. The absorption mechanism had been recognised and the values of direct and indirect energy gaps as well as exciton energies had been found by fitting the spectral dependencies of optical parameters.

AB - Optical transmittance and reflectance of crystalline gallium selenide (GaSe) pallets of different thicknesses had been determined for various photon energies (from 1.1 to 2.8 eV) as well as for different polarisations and angles of incidence upon a sample. Fitting of these results with appropriate formulae allowed us to determine values of real parts of refractive indices at the surface as well as in the bulk of the investigated material. Also the values of absorption coefficients had been determined. Values of these parameters for light with the electric vector parallel and perpendicular to the c-axis of the GaSe had been evaluated. The absorption mechanism had been recognised and the values of direct and indirect energy gaps as well as exciton energies had been found by fitting the spectral dependencies of optical parameters.

KW - Gallium selenide

KW - Interference spectroscopy of optical transmittance and reflectance

KW - Optical parameters

KW - Surface and bulk refractive indices

KW - VAR

UR - https://www.scopus.com/pages/publications/0037009277

U2 - 10.1016/S0042-207X(02)00191-4

DO - 10.1016/S0042-207X(02)00191-4

M3 - Conference article

AN - SCOPUS:0037009277

SN - 0042-207X

VL - 67

SP - 143

EP - 147

JO - Vacuum

JF - Vacuum

IS - 1

T2 - 2nd International Seminar On Semiconductor Surface Passivation (SSP'2001)

Y2 - 10 September 2001 through 13 September 2001

ER -

Surface and bulk values of real part of refractive index of GaSe

Abstrakt

Obszary tematyczne ASJC Scopus

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