Straty mocy i rezystancja zastępcza związane z przeładowywaniem nieliniowej pojemności wyjściowej tranzystora MOSFET

The design of power electronic converters requires the proper selection of their active components - transistors. In the case of highfrequency resonant inverter applications, a significant group of parameters to be considered are MOSFET transistor parasitic parameters in the offstate - nonlinear output capacitance, power losses and equivalent resistance associated with its cyclic charging and discharging. The paper presents a new method of determining these power losses and equivalent resistance of MOSFET transistor in the off-state.