Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO₂(110) surface

Electronic properties of the space charge layer of the clean and oxygen exposed SnO₂(110) surface have been analysed on the basis of the previously published results concerning the changes of the Fermi level position depending on the annealing temperature and oxygen exposure. Using the model of the differently ionised oxygen vacancies the correlations between recently reported values of the absolute band bending and electrical conductance were observed what was connected with the changes of the effective density of the filled electronic states localised in the band gap below the Fermi level E_F and in the upper part of the valence band.