Rigorous analysis of the electronic properties of InP interfaces for gas sensing

B. Adamowicz; M. Miczek; C. Brun; B. Gruzza; H. Hasegawa

doi:10.1016/S0040-6090(03)00519-4

Rigorous analysis of the electronic properties of InP interfaces for gas sensing

B. Adamowicz
, M. Miczek
, C. Brun
, B. Gruzza
, H. Hasegawa

Zakład Fizyki Stosowanej (RIF/RIF3)

Silesian University of Technology
Université Clermont Auvergne
Hokkaido University

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

8 Cytowania z bazy Scopus

Abstrakt

A theoretical analysis of the surface Fermi level position (E_FS) at n-InP interfaces with different surface state density (N_SS(E)) and surface fixed charge (Q_FC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of E_FS vs. the minimum surface state density N_SS0, the movement of E_FS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the E_FS sensitivity to the negative and positive Q_FC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

Język oryginału	angielski
Strony (od–do)	101-106
Liczba stron	6
Czasopismo	Thin Solid Films
Tom	436
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/S0040-6090(03)00519-4
Status publikacji	Opublikowano - 22 lip 2003
Wydarzenie	Papers From The 3rd Seminar on SGS 2002 - Ustron, Polska Czas trwania: 19 wrz 2002 → 22 wrz 2002

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Metale i stopy
Chemia materiałowa

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10.1016/S0040-6090(03)00519-4

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Cytowanie

@article{f97afd675e844be4975760337b74b194,

title = "Rigorous analysis of the electronic properties of InP interfaces for gas sensing",

abstract = "A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.",

keywords = "Electronic properties, Fermi level, Gas sensing, InP, Interfaces, Surface states",

author = "B. Adamowicz and M. Miczek and C. Brun and B. Gruzza and H. Hasegawa",

year = "2003",

month = jul,

day = "22",

doi = "10.1016/S0040-6090(03)00519-4",

language = "English",

volume = "436",

pages = "101--106",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

note = "Papers From The 3rd Seminar on SGS 2002 ; Conference date: 19-09-2002 Through 22-09-2002",

}

TY - JOUR

T1 - Rigorous analysis of the electronic properties of InP interfaces for gas sensing

AU - Adamowicz, B.

AU - Miczek, M.

AU - Brun, C.

AU - Gruzza, B.

AU - Hasegawa, H.

PY - 2003/7/22

Y1 - 2003/7/22

N2 - A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

AB - A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

KW - Electronic properties

KW - Fermi level

KW - Gas sensing

KW - InP

KW - Interfaces

KW - Surface states

UR - https://www.scopus.com/pages/publications/0038717100

U2 - 10.1016/S0040-6090(03)00519-4

DO - 10.1016/S0040-6090(03)00519-4

M3 - Conference article

AN - SCOPUS:0038717100

SN - 0040-6090

VL - 436

SP - 101

EP - 106

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Papers From The 3rd Seminar on SGS 2002

Y2 - 19 September 2002 through 22 September 2002

ER -

Rigorous analysis of the electronic properties of InP interfaces for gas sensing

Abstrakt

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