Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)% and (70-80)% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.