On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films

J. Szuber; J. Uljanow; T. Karczewska-Buczek; W. Jakubik; K. Waczyński; M. Kwoka; S. Kończak

doi:10.1016/j.tsf.2005.04.011

On the correlation between morphology and gas sensing properties of RGTO SnO₂ thin films

J. Szuber
, J. Uljanow
, T. Karczewska-Buczek
, W. Jakubik
, K. Waczyński
, M. Kwoka
, S. Kończak

Silesian University of Technology

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

18 Cytowania z bazy Scopus

Abstrakt

In this paper, we present the results of studies on optimalisation of morphology of the SnO₂ thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al₂O₃ ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO₂ thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO₂ thin films to nitrogen dioxide NO ₂.

Język oryginału	angielski
Strony (od–do)	54-58
Liczba stron	5
Czasopismo	Thin Solid Films
Tom	490
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/j.tsf.2005.04.011
Status publikacji	Opublikowano - 21 paź 2005
Wydarzenie	Proceedings of the 4th International Workshop on Semiconductor Gas Sensors (SGS 2004) - Czas trwania: 19 wrz 2004 → 23 wrz 2004

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Metale i stopy
Chemia materiałowa

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10.1016/j.tsf.2005.04.011

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Cytowanie

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title = "On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films",

abstract = "In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.",

keywords = "Deposition, Gas response, Oxidation, Thin films, Tin dioxide",

author = "J. Szuber and J. Uljanow and T. Karczewska-Buczek and W. Jakubik and K. Waczy{\'n}ski and M. Kwoka and S. Ko{\'n}czak",

year = "2005",

month = oct,

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doi = "10.1016/j.tsf.2005.04.011",

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journal = "Thin Solid Films",

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TY - JOUR

T1 - On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films

AU - Szuber, J.

AU - Uljanow, J.

AU - Karczewska-Buczek, T.

AU - Jakubik, W.

AU - Waczyński, K.

AU - Kwoka, M.

AU - Kończak, S.

PY - 2005/10/21

Y1 - 2005/10/21

N2 - In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.

AB - In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sn thin films were grown on Si(111) wafer and Al2O3 ceramic plate heated in the range 235-295 °C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 °C. Our studies confirmed that the highest surface coverage of Sn droplets can be reached for the substrate temperature of about 265 °C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO 2.

KW - Deposition

KW - Gas response

KW - Oxidation

KW - Thin films

KW - Tin dioxide

UR - https://www.scopus.com/pages/publications/24044540383

U2 - 10.1016/j.tsf.2005.04.011

DO - 10.1016/j.tsf.2005.04.011

M3 - Conference article

AN - SCOPUS:24044540383

SN - 0040-6090

VL - 490

SP - 54

EP - 58

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Proceedings of the 4th International Workshop on Semiconductor Gas Sensors (SGS 2004)

Y2 - 19 September 2004 through 23 September 2004

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