Methods for time synchronization of measurement probes for double pulse test (DPT) of SiC MOSFET transistors

Zbigniew Kaczmarczyk; Marcin Kasprzak; Piotr Legutko; Adam Ruszczyk; Michał Żaba; Mateusz Liszczyk

doi:10.15199/48.2026.3.24

Methods for time synchronization of measurement probes for double pulse test (DPT) of SiC MOSFET transistors

Przetłumaczony tytuł wkładu: Metody synchronizacji czasowej sond pomiarowych do testu dwupulsowego (DPT) tranzystorów SiC MOSFET

Zbigniew Kaczmarczyk
, Marcin Kasprzak
, Piotr Legutko
, Adam Ruszczyk
, Michał Żaba
, Mateusz Liszczyk

Katedra Energoelektroniki, Napędu Elektrycznego i Robotyki (RE/RE5)

Hitachi Energy Poland Sp. z o.o.

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

Abstrakt

The article addresses the issues related to the Double Pulse Test (DPT) used to determine the dynamic properties of SiC MOSFET transistors. The DPT method is characterized, with particular attention given to the methods of time synchronization for voltage and current measurement probes. To ensure proper synchronization, the automation of the method for reconstructing the transistor voltage based on the measured current is proposed, and a new, analogous method for reconstructing the transistor current using the recorded voltage is described.

Przetłumaczony tytuł wkładu	Metody synchronizacji czasowej sond pomiarowych do testu dwupulsowego (DPT) tranzystorów SiC MOSFET
Język oryginału	angielski
Strony (od–do)	156-165
Liczba stron	10
Czasopismo	Przeglad Elektrotechniczny
Tom	102
Numer wydania	3
Identyfikatory DOI	https://doi.org/10.15199/48.2026.3.24
Status publikacji	Opublikowano - 2026

Obszary tematyczne ASJC Scopus

Inżynieria elektryczna i elektroniczna

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10.15199/48.2026.3.24

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abstract = "The article addresses the issues related to the Double Pulse Test (DPT) used to determine the dynamic properties of SiC MOSFET transistors. The DPT method is characterized, with particular attention given to the methods of time synchronization for voltage and current measurement probes. To ensure proper synchronization, the automation of the method for reconstructing the transistor voltage based on the measured current is proposed, and a new, analogous method for reconstructing the transistor current using the recorded voltage is described.",

keywords = "determining switching energies, double pulse test (DPT), oscilloscope measurements, SiC MOSFET",

author = "Zbigniew Kaczmarczyk and Marcin Kasprzak and Piotr Legutko and Adam Ruszczyk and Micha{\l} {\.Z}aba and Mateusz Liszczyk",

year = "2026",

doi = "10.15199/48.2026.3.24",

language = "English",

volume = "102",

pages = "156--165",

journal = "Przeglad Elektrotechniczny",

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T1 - Methods for time synchronization of measurement probes for double pulse test (DPT) of SiC MOSFET transistors

AU - Kaczmarczyk, Zbigniew

AU - Kasprzak, Marcin

AU - Legutko, Piotr

AU - Ruszczyk, Adam

AU - Żaba, Michał

AU - Liszczyk, Mateusz

PY - 2026

Y1 - 2026

N2 - The article addresses the issues related to the Double Pulse Test (DPT) used to determine the dynamic properties of SiC MOSFET transistors. The DPT method is characterized, with particular attention given to the methods of time synchronization for voltage and current measurement probes. To ensure proper synchronization, the automation of the method for reconstructing the transistor voltage based on the measured current is proposed, and a new, analogous method for reconstructing the transistor current using the recorded voltage is described.

AB - The article addresses the issues related to the Double Pulse Test (DPT) used to determine the dynamic properties of SiC MOSFET transistors. The DPT method is characterized, with particular attention given to the methods of time synchronization for voltage and current measurement probes. To ensure proper synchronization, the automation of the method for reconstructing the transistor voltage based on the measured current is proposed, and a new, analogous method for reconstructing the transistor current using the recorded voltage is described.

KW - determining switching energies

KW - double pulse test (DPT)

KW - oscilloscope measurements

KW - SiC MOSFET

UR - https://www.scopus.com/pages/publications/105036174590

U2 - 10.15199/48.2026.3.24

DO - 10.15199/48.2026.3.24

M3 - Article

AN - SCOPUS:105036174590

SN - 0033-2097

VL - 102

SP - 156

EP - 165

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 3

ER -

Methods for time synchronization of measurement probes for double pulse test (DPT) of SiC MOSFET transistors

Abstrakt

Obszary tematyczne ASJC Scopus

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