Abstrakt
Purpose - The purpose of this paper is to characterize electrical parameters of amorphous Ni-P resistive layers used for fabrication of precise resistors. Design/methodology/approach - Ni-P resistive layers were produced by the chemical process in water solution using Ni2+and H 2PO2- ions. The paper presents the results of the studies concerning the influence of bath acidity and conditions of thermal stabilization on the structure and temperature coefficient of resistance of Ni-P alloy. Findings - The temperature coefficient of resistance of amorphous Ni-P layers was found to depend significantly on the parameters of chemical metallisation process. It was stated that the changes of through-casing resistivity versus the acidity of technological solution have roughly parabolic characteristics. Originality/value - In this paper, it was at first explained how the changes of the structure of Ni-P resistive layers depend on their temperature coefficient of capacitance. Alloys Electrical resistivity Metallizing Resistors Thin film ©
| Język oryginału | angielski |
|---|---|
| Strony (od–do) | 24-27 |
| Liczba stron | 4 |
| Czasopismo | Microelectronics International |
| Tom | 26 |
| Numer wydania | 2 |
| Identyfikatory DOI | |
| Status publikacji | Opublikowano - 8 maj 2009 |
Obszary tematyczne ASJC Scopus
- Materiały elektroniczne, optyczne i magnetyczne
- Fizyka atomowa i molekularna oraz optyka
- Fizyka materii skondensowanej
- Powierzchnie, powłoki i filmy
- Inżynieria elektryczna i elektroniczna
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