Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

G. J. Papaioannou; M. Nowak; P. C. Euthymiou

doi:10.1063/1.343199

Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

G. J. Papaioannou
, M. Nowak
, P. C. Euthymiou

Zakład Fizyki Ciała Stałego (RIF/RIF1)

National and Kapodistrian University of Athens

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

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Abstrakt

Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

Język oryginału	angielski
Strony (od–do)	4864-4868
Liczba stron	5
Czasopismo	Journal of Applied Physics
Tom	65
Numer wydania	12
Identyfikatory DOI	https://doi.org/10.1063/1.343199
Status publikacji	Opublikowano - 1989

Obszary tematyczne ASJC Scopus

Ogólna fizyka i astronomia

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10.1063/1.343199

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title = "Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr",

abstract = "Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.",

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year = "1989",

doi = "10.1063/1.343199",

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AU - Papaioannou, G. J.

AU - Nowak, M.

AU - Euthymiou, P. C.

PY - 1989

Y1 - 1989

N2 - Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

AB - Negative photoconductivity (PC) was observed in Si ion-implanted GaAs:Cr below the fundamental band gap. The dependence of this effect on wavelength and intensity of illumination is reported. For photon energies slightly smaller than the optical energy gap the negative PC reverts into positive PC with increasing illumination intensity. Complementary investigations of PC in Si ion-implanted, undoped GaAs also are presented. The physical reasons for the negative PC are discussed.

UR - https://www.scopus.com/pages/publications/12944289404

U2 - 10.1063/1.343199

DO - 10.1063/1.343199

M3 - Article

AN - SCOPUS:12944289404

SN - 0021-8979

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JO - Journal of Applied Physics

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ER -

Influence of illumination intensity on negative photoconductivity of Si ion-implanted GaAs:Cr

Abstrakt

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