High‐frequency photomagnetoelectric method for determining semiconductor parameters

S. Kończak; K. Kotewicz; M. Nowak

doi:10.1002/pssa.2210650205

High‐frequency photomagnetoelectric method for determining semiconductor parameters

S. Kończak
, K. Kotewicz
, M. Nowak

Zakład Fizyki Ciała Stałego (RIF/RIF1)

Silesian University of Technology

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

5 Cytowania z bazy Scopus

Abstrakt

The high‐frequency method of investigation of PME and PC effects is used for the measurements on silicon samples of different thickness. A method for testing the conformity of thick or thin samples, a theory to work out the experimental results is reported. An application of the acoustooptical modulation of a laser beam to the investigation of PME and PC effects is presented.

Język oryginału	angielski
Strony (od–do)	447-451
Liczba stron	5
Czasopismo	Physica Status Solidi (A) Applied Research
Tom	65
Numer wydania	2
Identyfikatory DOI	https://doi.org/10.1002/pssa.2210650205
Status publikacji	Opublikowano - 16 cze 1981

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Fizyka materii skondensowanej

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10.1002/pssa.2210650205

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abstract = "The high‐frequency method of investigation of PME and PC effects is used for the measurements on silicon samples of different thickness. A method for testing the conformity of thick or thin samples, a theory to work out the experimental results is reported. An application of the acoustooptical modulation of a laser beam to the investigation of PME and PC effects is presented.",

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AU - Kotewicz, K.

AU - Nowak, M.

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N2 - The high‐frequency method of investigation of PME and PC effects is used for the measurements on silicon samples of different thickness. A method for testing the conformity of thick or thin samples, a theory to work out the experimental results is reported. An application of the acoustooptical modulation of a laser beam to the investigation of PME and PC effects is presented.

AB - The high‐frequency method of investigation of PME and PC effects is used for the measurements on silicon samples of different thickness. A method for testing the conformity of thick or thin samples, a theory to work out the experimental results is reported. An application of the acoustooptical modulation of a laser beam to the investigation of PME and PC effects is presented.

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DO - 10.1002/pssa.2210650205

M3 - Article

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High‐frequency photomagnetoelectric method for determining semiconductor parameters

Abstrakt

Obszary tematyczne ASJC Scopus

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