High-frequency power MOSFET drivers

Piotr Legutko

doi:10.12915/pe.2014.05.51

High-frequency power MOSFET drivers

Przetłumaczony tytuł wkładu: Wysokocze{ogonek}stotliwościowe drajwery tranzystorów MOSFET mocy

Piotr Legutko

Katedra Energoelektroniki, Napędu Elektrycznego i Robotyki (RE/RE5)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

5 Cytowania z bazy Scopus

Abstrakt

This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology.

Przetłumaczony tytuł wkładu	Wysokocze{ogonek}stotliwościowe drajwery tranzystorów MOSFET mocy
Język oryginału	angielski
Strony (od–do)	229-234
Liczba stron	6
Czasopismo	Przeglad Elektrotechniczny
Tom	90
Numer wydania	5
Identyfikatory DOI	https://doi.org/10.12915/pe.2014.05.51
Status publikacji	Opublikowano - 2014

Obszary tematyczne ASJC Scopus

Inżynieria elektryczna i elektroniczna

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10.12915/pe.2014.05.51

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Cytowanie

@article{43a8dac84de64300af38b1b07be14910,

title = "High-frequency power MOSFET drivers",

abstract = "This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology.",

keywords = "Analysis, Driver, MOSFET Transistor, Power losses",

author = "Piotr Legutko",

year = "2014",

doi = "10.12915/pe.2014.05.51",

language = "English",

volume = "90",

pages = "229--234",

journal = "Przeglad Elektrotechniczny",

issn = "0033-2097",

publisher = "Wydawnictwo SIGMA-NOT",

number = "5",

}

TY - JOUR

T1 - High-frequency power MOSFET drivers

AU - Legutko, Piotr

PY - 2014

Y1 - 2014

N2 - This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology.

AB - This paper presents a systematic approach to design high performance gate drive circuits for high speed switching applications. In the project tested two integrated drivers DEIC420, DEIC515, and additionally two discrete drivers 4xZXGD3003 and 8xEL7457 have been designed. The new MOSFET Drivers have been verified by using the universal laboratory in Department of Power Electronics, Electrical Drives and Robotics Silesian University of Technology.

KW - Analysis

KW - Driver

KW - MOSFET Transistor

KW - Power losses

UR - https://www.scopus.com/pages/publications/84920515233

U2 - 10.12915/pe.2014.05.51

DO - 10.12915/pe.2014.05.51

M3 - Article

AN - SCOPUS:84920515233

SN - 0033-2097

VL - 90

SP - 229

EP - 234

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 5

ER -

High-frequency power MOSFET drivers

Abstrakt

Obszary tematyczne ASJC Scopus

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