Evaluation of the usefulness of silica glass for the production of MIS structures with a double dielectric layer

The paper presents the research into a technique of fabrication two-layer dielectrics on selected semiconductor materials. For the present, the research has shown that the application of spin-on silica solutions obtained on the basis of silica-organic compounds makes it possible to achieve good electrophysical parameters of dielectric films. The paper describes a technique which consists in combining the method of dielectric film formation with spin-on glass with the method of electrolytic anodisation. This is particularly essential in the case of structures made of III-V semiconductors.