Electronic properties of the space charge layer of the clean SnO2(110) surface

J. Szuber; M. Piwowarczyk

doi:10.1016/0042-207X(94)90175-9

Electronic properties of the space charge layer of the clean SnO₂(110) surface

J. Szuber
, M. Piwowarczyk

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Silesian University of Technology

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

2 Cytowania z bazy Scopus

Abstrakt

Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO₂(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level E_F were observed. Their origin has also been briefly discussed.

Język oryginału	angielski
Strony (od–do)	215-217
Liczba stron	3
Czasopismo	Vacuum
Tom	45
Numer wydania	2-3
Identyfikatory DOI	https://doi.org/10.1016/0042-207X(94)90175-9
Status publikacji	Opublikowano - 1994

Cele SDG ONZ

Ten wynik przyczynia się do realizacji następujących celów zrównoważonego rozwoju

Cel 7 Przystępna i czysta energia

Obszary tematyczne ASJC Scopus

Instrumentacja
Fizyka materii skondensowanej
Powierzchnie, powłoki i filmy

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10.1016/0042-207X(94)90175-9

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title = "Electronic properties of the space charge layer of the clean SnO2(110) surface",

abstract = "Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.",

author = "J. Szuber and M. Piwowarczyk",

year = "1994",

doi = "10.1016/0042-207X(94)90175-9",

language = "English",

volume = "45",

pages = "215--217",

journal = "Vacuum",

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AU - Piwowarczyk, M.

PY - 1994

Y1 - 1994

N2 - Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.

AB - Photoemission Yield Spectroscopy (PYS) associated with Auger Electron Spectroscopy (AES) and Low Energy Electron Diffraction (LEED) control have been used in the studies of the electronic properties of the surface space charge layer of the clean SnO2(110) surface with (1 × 1) atomic structure obtained by ion bombardment with subsequent annealing at 900 K. The work function φ and absolute band bending eVs were 4.20±0.03 and -1.64±0.13 eV, respectively. Moreover, two filled electronic state bands localized in the band gap below the Fermi level EF were observed. Their origin has also been briefly discussed.

UR - https://www.scopus.com/pages/publications/0028375468

U2 - 10.1016/0042-207X(94)90175-9

DO - 10.1016/0042-207X(94)90175-9

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JO - Vacuum

JF - Vacuum

IS - 2-3

ER -