Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

J. Szuber

doi:10.1016/0040-6090(83)90328-0

Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

J. Szuber

Katedra Cybernetyki, Nanotechnologii i Przetwarzania Danych (RAU/RAU10)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

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Abstrakt

Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10^-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

Język oryginału	angielski
Strony (od–do)	33-37
Liczba stron	5
Czasopismo	Thin Solid Films
Tom	105
Numer wydania	1
Identyfikatory DOI	https://doi.org/10.1016/0040-6090(83)90328-0
Status publikacji	Opublikowano - 8 lip 1983

Obszary tematyczne ASJC Scopus

Materiały elektroniczne, optyczne i magnetyczne
Powierzchnie i interfejsy
Powierzchnie, powłoki i filmy
Metale i stopy
Chemia materiałowa

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10.1016/0040-6090(83)90328-0

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Cytowanie

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title = "Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum",

abstract = "Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 {\texttimes} 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.",

author = "J. Szuber",

year = "1983",

month = jul,

day = "8",

doi = "10.1016/0040-6090(83)90328-0",

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T1 - Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

AU - Szuber, J.

PY - 1983/7/8

Y1 - 1983/7/8

N2 - Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

AB - Photoemission yield spectroscopy was used to investigate the electronic properties of GaAs(100) surfaces thermally cleaned at 800 K in ultrahigh vacuum (2 × 10-7 Pa). The work function, ionization energy, surface electron affinity and absolute band bending were determined. The origin of surface state bands in the gap and in the upper part of the valence band is briefly discussed.

UR - https://www.scopus.com/pages/publications/0021097612

U2 - 10.1016/0040-6090(83)90328-0

DO - 10.1016/0040-6090(83)90328-0

M3 - Article

AN - SCOPUS:0021097612

SN - 0040-6090

VL - 105

SP - 33

EP - 37

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Electronic properties and origin of surface states on GaAs(100) surfaces thermally cleaned in ultrahigh vacuum

Abstrakt

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