Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique

M. Nowak; A. Starczewska

Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique

M. Nowak
, A. Starczewska

Zakład Fizyki Ciała Stałego (RIF/RIF1)

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

Abstrakt

The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.

Język oryginału	angielski
Strony (od–do)	420-424
Liczba stron	5
Czasopismo	Electron Technology (Warsaw)
Tom	31
Numer wydania	3-4
Status publikacji	Opublikowano - 1998
Wydarzenie	Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures - Ustron, Pol Czas trwania: 23 wrz 1997 → 26 wrz 1997

Obszary tematyczne ASJC Scopus

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Cytowanie

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title = "Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique",

abstract = "The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.",

author = "M. Nowak and A. Starczewska",

year = "1998",

language = "English",

volume = "31",

pages = "420--424",

journal = "Electron Technology (Warsaw)",

issn = "0070-9816",

publisher = "Institute of Electron Technology",

number = "3-4",

note = "Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures ; Conference date: 23-09-1997 Through 26-09-1997",

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TY - JOUR

T1 - Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique

AU - Nowak, M.

AU - Starczewska, A.

PY - 1998

Y1 - 1998

N2 - The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.

AB - The steady state photocarrier grating (SSPG) technique has been used for determining diffusion length of carriers in amorphous hydrogenated silicon (a-Si:H). The novelty of the presented paper is consistent in the taking into account the spatial distribution of radiation intensity over thickness of the investigated thin film. This spatial distribution is evoked by interference of radiation internally reflected in the thin film as well as by the influence of radiation reflectance in the thin film substrate.

UR - https://www.scopus.com/pages/publications/0032305482

M3 - Conference article

AN - SCOPUS:0032305482

SN - 0070-9816

VL - 31

SP - 420

EP - 424

JO - Electron Technology (Warsaw)

JF - Electron Technology (Warsaw)

IS - 3-4

T2 - Proceedings of the 1997 5th Seminar on Surface and Thin Film Structures

Y2 - 23 September 1997 through 26 September 1997

ER -

Determining of diffusion length of carriers in thin films of a-Si:H using SSPG technique

Abstrakt

Obszary tematyczne ASJC Scopus

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Cytowanie