Dependence of silicon surface electronic parameters on surface Fermi level position

B. Adamowicz

doi:10.1016/0042-207X(94)90162-7

Dependence of silicon surface electronic parameters on surface Fermi level position

B. Adamowicz

Zakład Fizyki Stosowanej (RIF/RIF3)

Wyniki badań: Wkład do czasopisma › Artykuł › recenzja

2 Cytowania z bazy Scopus

Abstrakt

The surface Fermi level position Φ_S′, the surface space charge Q_SC′, and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photocondctivity dependences vs light intensity, photon energy and temperature from 300 to 430 K. The complementary character of S(Φ_S) as well as Q_SC(Φ_S) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process, regardless of the type of bulk doping.

Język oryginału	angielski
Strony (od–do)	167-170
Liczba stron	4
Czasopismo	Vacuum
Tom	45
Numer wydania	2-3
Identyfikatory DOI	https://doi.org/10.1016/0042-207X(94)90162-7
Status publikacji	Opublikowano - 1994

Obszary tematyczne ASJC Scopus

Instrumentacja
Fizyka materii skondensowanej
Powierzchnie, powłoki i filmy

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10.1016/0042-207X(94)90162-7

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title = "Dependence of silicon surface electronic parameters on surface Fermi level position",

abstract = "The surface Fermi level position ΦS′, the surface space charge QSC′, and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photocondctivity dependences vs light intensity, photon energy and temperature from 300 to 430 K. The complementary character of S(ΦS) as well as QSC(ΦS) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process, regardless of the type of bulk doping.",

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T1 - Dependence of silicon surface electronic parameters on surface Fermi level position

AU - Adamowicz, B.

PY - 1994

Y1 - 1994

N2 - The surface Fermi level position ΦS′, the surface space charge QSC′, and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photocondctivity dependences vs light intensity, photon energy and temperature from 300 to 430 K. The complementary character of S(ΦS) as well as QSC(ΦS) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process, regardless of the type of bulk doping.

AB - The surface Fermi level position ΦS′, the surface space charge QSC′, and the surface recombination velocity S for real (111) surfaces of p- and n-type Si have been studied. Therefore we have measured the surface photovoltage and photocondctivity dependences vs light intensity, photon energy and temperature from 300 to 430 K. The complementary character of S(ΦS) as well as QSC(ΦS) dependences supports the view that the surface state distribution on the real semiconductor surface is determined mainly by the surface preparation process, regardless of the type of bulk doping.

UR - https://www.scopus.com/pages/publications/0028375856

U2 - 10.1016/0042-207X(94)90162-7

DO - 10.1016/0042-207X(94)90162-7

M3 - Article

AN - SCOPUS:0028375856

SN - 0042-207X

VL - 45

SP - 167

EP - 170

JO - Vacuum

JF - Vacuum

IS - 2-3

ER -

Dependence of silicon surface electronic parameters on surface Fermi level position

Abstrakt

Obszary tematyczne ASJC Scopus

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