Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Boguslawa Adamowicz; Hideki Hasegawa

doi:10.1016/S0042-207X(98)00455-2

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Boguslawa Adamowicz
, Hideki Hasegawa

Zakład Fizyki Stosowanej (RIF/RIF3)

Hokkaido University

Wyniki badań: Wkład do czasopisma › Artykuł z konferencji › recenzja

6 Cytowania z bazy Scopus

Abstrakt

Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge Q_FC), and incident photon flux density from 10⁵ to 10²⁶ cm^-2s^-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

Język oryginału	angielski
Strony (od–do)	173-177
Liczba stron	5
Czasopismo	Vacuum
Tom	54
Numer wydania	1-4
Identyfikatory DOI	https://doi.org/10.1016/S0042-207X(98)00455-2
Status publikacji	Opublikowano - lip 1999
Wydarzenie	Proceedings of the 1998 19th International Seminar on Surface Physics - Polanica-Zdroj, Pol Czas trwania: 15 cze 1998 → 19 cze 1998

Obszary tematyczne ASJC Scopus

Instrumentacja
Fizyka materii skondensowanej
Powierzchnie, powłoki i filmy

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10.1016/S0042-207X(98)00455-2

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abstract = "Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.",

author = "Boguslawa Adamowicz and Hideki Hasegawa",

year = "1999",

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T1 - Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

AU - Adamowicz, Boguslawa

AU - Hasegawa, Hideki

PY - 1999/7

Y1 - 1999/7

N2 - Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

AB - Rigorous computer analysis of the bipolar surface photovoltage (SPV), including contribution of surface states with U-shaped density distribution and Dember photo-effect, was performed for n-Si and n-GaAs surfaces. The initial surface band bending was varied from accumulation to inversion (in terms of the surface fixed charge QFC), and incident photon flux density from 105 to 1026 cm-2s-1. The behavior of SPV under weak and strong photo-excitation is discussed for possible use in surface characterization.

UR - https://www.scopus.com/pages/publications/0033154329

U2 - 10.1016/S0042-207X(98)00455-2

DO - 10.1016/S0042-207X(98)00455-2

M3 - Conference article

AN - SCOPUS:0033154329

SN - 0042-207X

VL - 54

SP - 173

EP - 177

JO - Vacuum

JF - Vacuum

IS - 1-4

T2 - Proceedings of the 1998 19th International Seminar on Surface Physics

Y2 - 15 June 1998 through 19 June 1998

ER -

Computer simulations of the surface photovoltage on Si and GaAs surfaces with U-shaped surface state continuum

Abstrakt

Obszary tematyczne ASJC Scopus

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