Abstrakt
The knowledge of the optical and geometrical parameters of thin films is important for optics and optoelectronics. The comparison of spectral dependences of real part of refractive index and absorption coefficient of radiation in a-Si:H as well as thin film thickness and its standard deviation obtained from spectral dependences of optical transmittance T(λ) and/or R(λ) is presented. Taking into account the Gaussian distribution of the change in phase Γ of radiation traversing a thin film on the spectral characteristic 7(λ) and R(λ) is the novelty of the used method of investigations. The consequences of linear and Gaussian distributions of Γ for R(λ) are shown the first time. It is shown that the values of optical parameters obtained from T(λ) and R(λ) simultaneously are more reliable, although the simpler investigations of T(hv) or R(hv) separately can give results comparable with them
| Język oryginału | angielski |
|---|---|
| Strony (od–do) | 105-110 |
| Liczba stron | 6 |
| Czasopismo | NDT and E International |
| Tom | 31 |
| Numer wydania | 2 |
| Identyfikatory DOI | |
| Status publikacji | Opublikowano - kwi 1998 |
Obszary tematyczne ASJC Scopus
- Materiałoznawstwo ogólne
- Fizyka materii skondensowanej
- Inżynieria mechaniczna
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