Chemical routes to magnetic nonvolatile memory devices

Andrea Ehrmann; Tomasz Blachowicz

doi:10.1016/B978-0-12-819718-9.00010-8

Chemical routes to magnetic nonvolatile memory devices

Andrea Ehrmann
, Tomasz Blachowicz

Zakład Geochronologii i Badań Izotopowych Środowiska (RIF/RIF2)

Bielefeld University of Applied Sciences

Wyniki badań: Rozdział w książce/raport/materiał konferencyjny › Rozdział › recenzja

2 Cytowania z bazy Scopus

Abstrakt

Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

Język oryginału	angielski
Tytuł publikacji goszczącej	Chemical Solution Synthesis for Materials Design and Thin Film Device Applications
Wydawca	Elsevier
Strony	665-677
Liczba stron	13
ISBN (elektroniczny)	9780128197189
Identyfikatory DOI	https://doi.org/10.1016/B978-0-12-819718-9.00010-8
Status publikacji	Opublikowano - 1 sty 2021

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@inbook{8b0f1203435c4cb9bd62e52c55f86050,

title = "Chemical routes to magnetic nonvolatile memory devices",

abstract = "Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.",

keywords = "Chemical deposition, Chemical etching, Dry etching, Giant magnetoresistance, MRAM, Magnetic memory, Nonvolatile, Tunnel magnetoresistance",

author = "Andrea Ehrmann and Tomasz Blachowicz",

year = "2021",

month = jan,

day = "1",

doi = "10.1016/B978-0-12-819718-9.00010-8",

language = "English",

pages = "665--677",

booktitle = "Chemical Solution Synthesis for Materials Design and Thin Film Device Applications",

publisher = "Elsevier",

address = "Netherlands",

}

TY - CHAP

T1 - Chemical routes to magnetic nonvolatile memory devices

AU - Ehrmann, Andrea

AU - Blachowicz, Tomasz

PY - 2021/1/1

Y1 - 2021/1/1

N2 - Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

AB - Magnetoresistive (or magnetic) random-access memories (MRAMs) belong to the nonvolatile memory devices, using magnetism to store information for long time periods. MRAMs are faster than mechanical hard disk drives and unlike solid-state drives (SSDs), can store data even without regular energy supply. A few other ideas, such as ferroelectric and phase-change materials, are also expected to show similar properties but are scarcely investigated.

KW - Chemical deposition

KW - Chemical etching

KW - Dry etching

KW - Giant magnetoresistance

KW - MRAM

KW - Magnetic memory

KW - Nonvolatile

KW - Tunnel magnetoresistance

UR - https://www.scopus.com/pages/publications/85126829025

U2 - 10.1016/B978-0-12-819718-9.00010-8

DO - 10.1016/B978-0-12-819718-9.00010-8

M3 - Chapter

AN - SCOPUS:85126829025

SP - 665

EP - 677

BT - Chemical Solution Synthesis for Materials Design and Thin Film Device Applications

PB - Elsevier

ER -

Chemical routes to magnetic nonvolatile memory devices

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