XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface

J. Szuber; E. Bergignat; G. Hollinger; A. Polakowska; P. Kościelniak

doi:10.1016/S0042-207X(02)00193-8

XPS study of the surface Fermi level of (NH₄)₂S_x-passivated GaAs(1 0 0) surface

J. Szuber
, E. Bergignat
, G. Hollinger
, A. Polakowska
, P. Kościelniak

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Lyon-UMR CNRS 5512
Silesian University of Technology

Research output: Contribution to journal › Conference article › peer-review

28 Citations (Scopus)

Abstract

In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH₄)₂S_x solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap E_F-E_v after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

Original language	English
Pages (from-to)	53-58
Number of pages	6
Journal	Vacuum
Volume	67
Issue number	1
DOIs	https://doi.org/10.1016/S0042-207X(02)00193-8
Publication status	Published - 2 Sept 2002
Event	2nd International Seminar On Semiconductor Surface Passivation (SSP'2001) - Ustron, Poland Duration: 10 Sept 2001 → 13 Sept 2001

Keywords

Gallium arsenide surface
Passivation
Sulfidation
X-ray photoelectron spectroscopy

ASJC Scopus subject areas

Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films

Access to Document

10.1016/S0042-207X(02)00193-8

Cite this

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title = "XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface",

abstract = "In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.",

keywords = "Gallium arsenide surface, Passivation, Sulfidation, X-ray photoelectron spectroscopy",

author = "J. Szuber and E. Bergignat and G. Hollinger and A. Polakowska and P. Ko{\'s}cielniak",

year = "2002",

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T1 - XPS study of the surface Fermi level of (NH4)2Sx-passivated GaAs(1 0 0) surface

AU - Szuber, J.

AU - Bergignat, E.

AU - Hollinger, G.

AU - Polakowska, A.

AU - Kościelniak, P.

PY - 2002/9/2

Y1 - 2002/9/2

N2 - In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

AB - In this paper we present the results of systematic XPS study of the surface Fermi-level postion at the sulfide-passivated GaAs(100) surface starting from the epi-ready sample through the different procedures of its dipping in a saturated polysulfide (NH4)2Sx solution, and finally combined with a UHV annealing. Moreover, the MBE As-stabilized GaAs(100) (2 × 4) surface was used as a reference sample. The surface Fermi level position in the band gap EF-Ev after each processing step was determined from the position of the bulk component of binding energy of Ga3d and As3d core level spectra. Moreover, a correlation between the variation of electronic properties and surface chemistry of the GaAs(100) surface after sulfidation was derived from the analysis of the relative intensity of the main oxygen, carbon and sulfur XPS peaks.

KW - Gallium arsenide surface

KW - Passivation

KW - Sulfidation

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/0037009209

U2 - 10.1016/S0042-207X(02)00193-8

DO - 10.1016/S0042-207X(02)00193-8

M3 - Conference article

AN - SCOPUS:0037009209

SN - 0042-207X

VL - 67

SP - 53

EP - 58

JO - Vacuum

JF - Vacuum

IS - 1

T2 - 2nd International Seminar On Semiconductor Surface Passivation (SSP'2001)

Y2 - 10 September 2001 through 13 September 2001

ER -