XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH                         4                         )                         2                         S                         x                          solution

S. Arabasz; E. Bergignat; G. Hollinger; J. Szuber

doi:10.1016/j.apsusc.2006.03.061

XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution

S. Arabasz
, E. Bergignat
, G. Hollinger
, J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Silesian University of Technology
Lyon-UMR CNRS 5512

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

In this work we analyze the effect of (NH) ₂ S _x wet treatment on the GaAs(1 0 0) covered with "epiready" oxide layer without any pretreatment in order to check the removal of oxides and carbon-related contamination, and the formation of sulfur species. The sulfidation procedure consisted of epiready sample dipping (at room and 40 °C temperatures) in an ammonium polysulfide solution combined with a UHV flash annealing up to 500 °C. The inspection of the XPS As 2p _3/2 and Ga 2p _3/2 spectra taken at surface sensitive mode revealed: (i) the temperature-dependent reduction of the amount of GaAs oxides and carbon contamination after sulfidation, and almost their complete removal after subsequent annealing, (ii) the creation of sulfur bonds with both Ga and As, with more thermally stable Ga-S bonds, and (iii) the slight reduction in elemental arsenic amount.

Original language	English
Pages (from-to)	7659-7663
Number of pages	5
Journal	Applied Surface Science
Volume	252
Issue number	21
DOIs	https://doi.org/10.1016/j.apsusc.2006.03.061
Publication status	Published - 31 Aug 2006

Keywords

GaAs
Passivation
Sulfidation
XPS

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2006.03.061

Cite this

Arabasz, S., Bergignat, E., Hollinger, G., & Szuber, J. (2006). XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution Applied Surface Science, 252(21), 7659-7663. https://doi.org/10.1016/j.apsusc.2006.03.061

Arabasz, S. ; Bergignat, E. ; Hollinger, G. et al. / XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution In: Applied Surface Science. 2006 ; Vol. 252, No. 21. pp. 7659-7663.

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Arabasz, S, Bergignat, E, Hollinger, G & Szuber, J 2006, ' XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution ', Applied Surface Science, vol. 252, no. 21, pp. 7659-7663. https://doi.org/10.1016/j.apsusc.2006.03.061

XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution . / Arabasz, S.; Bergignat, E.; Hollinger, G. et al.
In: Applied Surface Science, Vol. 252, No. 21, 31.08.2006, p. 7659-7663.

Research output: Contribution to journal › Article › peer-review

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T1 - XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH 4 ) 2 S x solution

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AB - In this work we analyze the effect of (NH) 2 S x wet treatment on the GaAs(1 0 0) covered with "epiready" oxide layer without any pretreatment in order to check the removal of oxides and carbon-related contamination, and the formation of sulfur species. The sulfidation procedure consisted of epiready sample dipping (at room and 40 °C temperatures) in an ammonium polysulfide solution combined with a UHV flash annealing up to 500 °C. The inspection of the XPS As 2p 3/2 and Ga 2p 3/2 spectra taken at surface sensitive mode revealed: (i) the temperature-dependent reduction of the amount of GaAs oxides and carbon contamination after sulfidation, and almost their complete removal after subsequent annealing, (ii) the creation of sulfur bonds with both Ga and As, with more thermally stable Ga-S bonds, and (iii) the slight reduction in elemental arsenic amount.

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Arabasz S, Bergignat E, Hollinger G, Szuber J. XPS analysis of surface chemistry of near surface region of epiready GaAs(1 0 0) surface treated with (NH ₄ ) ₂ S _x solution Applied Surface Science. 2006 Aug 31;252(21):7659-7663. doi: 10.1016/j.apsusc.2006.03.061