Abstract
In this paper is presented modified technology of preparation of Ni-P resistive layers. These layers are characterised by square resistance 0,5 - 10Ω, minimised TCR and best stability. In this paper are described change of resistance with changes of temperature.
| Translated title of the contribution | Technology of preparation of Ni-P resistive layers |
|---|---|
| Original language | Polish |
| Pages (from-to) | 276-278 |
| Number of pages | 3 |
| Journal | Przeglad Elektrotechniczny |
| Volume | 86 |
| Issue number | 6 |
| Publication status | Published - Jun 2010 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
Fingerprint
Dive into the research topics of 'Technology of preparation of Ni-P resistive layers'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver