Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

Piotr Legutko

doi:10.15199/48.2016.04.07

Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

Translated title of the contribution: The low-losses and fast switching hybrid drivers for DE series MOSFET transistors

Piotr Legutko

Department of Power Electronics, Electrical Drives and Robotics (RE/RE5)

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances L_DR, capacities C_OUT and resistances R_DR) for all drivers.

Translated title of the contribution	The low-losses and fast switching hybrid drivers for DE series MOSFET transistors
Original language	Polish
Pages (from-to)	132-136
Number of pages	5
Journal	Przeglad Elektrotechniczny
Volume	92
Issue number	4
DOIs	https://doi.org/10.15199/48.2016.04.07
Publication status	Published - 1 Mar 2016

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Wysokocz{\c e}stotliwo{\'s}ciowe, dyskretne drajwery ma{\l}ej mocy dedykowane do tranzystor{\'o}w MOSFET serii DE",

abstract = "This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.",

keywords = "High frequency drivers, MOSFET transistor, Parasitic parameters, Power losses, Resonant inverter, Thermal clad",

author = "Piotr Legutko",

year = "2016",

month = mar,

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doi = "10.15199/48.2016.04.07",

language = "polski",

volume = "92",

pages = "132--136",

journal = "Przeglad Elektrotechniczny",

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publisher = "Wydawnictwo SIGMA-NOT",

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AU - Legutko, Piotr

PY - 2016/3/1

Y1 - 2016/3/1

N2 - This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.

AB - This paper presents a systematic approach to design high performance discrete gate driver circuits for high speed switching applications. In the project tested three integrated drivers IXYS Corporation and additionally eight discrete drivers have been designed. Additionally, in this paper presents characteristic power input by the drivers (fig.4) for three operating states: at idle, at capacitance load 3 nF and at gate MOSFET 501N16A load. Also in this paper presents voltage waveforms (fig.5) and pictures of the thermal camera. At the end presents the measurements of parasitic parameters (inductances LDR, capacities COUT and resistances RDR) for all drivers.

KW - High frequency drivers

KW - MOSFET transistor

KW - Parasitic parameters

KW - Power losses

KW - Resonant inverter

KW - Thermal clad

UR - https://www.scopus.com/pages/publications/84964063170

U2 - 10.15199/48.2016.04.07

DO - 10.15199/48.2016.04.07

M3 - Artykuł

AN - SCOPUS:84964063170

SN - 0033-2097

VL - 92

SP - 132

EP - 136

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 4

ER -

Wysokoczęstotliwościowe, dyskretne drajwery małej mocy dedykowane do tranzystorów MOSFET serii DE

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