The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

J. Szuber

doi:10.1016/0039-6028(89)90289-6

The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level E_F and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

Original language	English
Pages (from-to)	294-302
Number of pages	9
Journal	Surface Science
Volume	213
Issue number	2-3
DOIs	https://doi.org/10.1016/0039-6028(89)90289-6
Publication status	Published - 3 Apr 1989

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(89)90289-6

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title = "The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface",

abstract = "Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.",

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N2 - Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

AB - Photoemission yield spectroscopy (PYS) associated with Auger electron spectroscopy (AES) control have been used in the investigation of the influence of the first steps of oxygen adsorption on the electronic properties of the clean, polar GaAs(111)As surface obtained by ion bombardent cleaning with subsequent annealing at 770 K. Depending on the oxygen coverage the variation of the work function and absolute band bending are analyzed together with the changes of the effective density of the filled electronic states localized in the band gap below the Fermi level EF and in the upper part of the valence band within 1 eV below the top. Their possible origins are briefly discussed.

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DO - 10.1016/0039-6028(89)90289-6

M3 - Article

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VL - 213

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EP - 302

JO - Surface Science

JF - Surface Science

IS - 2-3

ER -

The influence of oxygen adsorption on the electronic properties of the polar GaAs(111)As surface

Abstract

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