The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Krzysztof Bernacki; Zbigniew Rymarski

doi:10.3390/en16020870

The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Department of Electronics; Electrical Engineering and Microelectronics (RAU/RAU11)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

Original language	English
Article number	870
Journal	Energies
Volume	16
Issue number	2
DOIs	https://doi.org/10.3390/en16020870
Publication status	Published - Jan 2023

Keywords

near-field interferences
power spectral density
radiation noise
voltage source inverter
wide-band-gap transistors

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Building and Construction
Fuel Technology
Engineering (miscellaneous)
Energy Engineering and Power Technology
Energy (miscellaneous)
Control and Optimization
Electrical and Electronic Engineering

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Cite this

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title = "The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise",

abstract = "The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.",

keywords = "near-field interferences, power spectral density, radiation noise, voltage source inverter, wide-band-gap transistors",

author = "Krzysztof Bernacki and Zbigniew Rymarski",

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year = "2023",

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doi = "10.3390/en16020870",

language = "English",

volume = "16",

journal = "Energies",

issn = "1996-1073",

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T1 - The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

AU - Bernacki, Krzysztof

AU - Rymarski, Zbigniew

PY - 2023/1

Y1 - 2023/1

N2 - The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

AB - The aim of the paper is to present the change in the radiation noise of the single-phase voltage source inverter (VSI) when the Si-MOSFET transistors are replaced by the wide-band-gap (WBG) SiC-MOSFET and GaN transistors. The power spectral density of the near-field interference is used to visualise the change of the radiation noise of the VSI. The conclusions concern the results of the experimental replacement of the switches to the WBG technology in the existing inverters. Three switching frequencies and two gate circuits were used to show the change in the radiation noise. The measurements of the experimental VSI are presented.

KW - near-field interferences

KW - power spectral density

KW - radiation noise

KW - voltage source inverter

KW - wide-band-gap transistors

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M3 - Article

AN - SCOPUS:85146714099

SN - 1996-1073

VL - 16

JO - Energies

JF - Energies

IS - 2

M1 - 870

ER -

The Experimentally Measured Influence of the Si-MOSFET Replacement Switches to WBG Transistors in the Voltage Source Inverters as the Source of Radiation Noise

Abstract

Keywords

ASJC Scopus subject areas

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