Abstract
A method is given for estimating various semiconductor parameters by least‐squares fitting the variation of the photomagneto electric effect with magnetic field, using general, theorectical formulae. The results of investigations on Ge are reported as well as the results of the treatment of p‐InSb data which are accessible in references.
| Original language | English |
|---|---|
| Pages (from-to) | 305-311 |
| Number of pages | 7 |
| Journal | Physica Status Solidi (A) Applied Research |
| Volume | 63 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 16 Jan 1981 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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