Temperature dependence of the energy gap of inxSe1-x compounds

Anna Michalewicz; Marian Nowak; Mirosława Kȩpińska

doi:10.1002/pssb.200541055

Temperature dependence of the energy gap of in_xSe_1-x compounds

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Abstract

The optical absorption for photon energies of In_xSe _1-x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hv = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used.

Original language	English
Pages (from-to)	685-689
Number of pages	5
Journal	Physica Status Solidi (B): Basic Research
Volume	243
Issue number	3
DOIs	https://doi.org/10.1002/pssb.200541055
Publication status	Published - Mar 2006

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Temperature dependence of the energy gap of inxSe1-x compounds",

abstract = "The optical absorption for photon energies of InxSe 1-x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hv = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used.",

author = "Anna Michalewicz and Marian Nowak and Miros{\l}awa Kȩpi{\'n}ska",

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AU - Michalewicz, Anna

AU - Nowak, Marian

AU - Kȩpińska, Mirosława

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AB - The optical absorption for photon energies of InxSe 1-x thin films was used to determine the variation of the energy gap and the Urbach energy as a function of temperature in the range from 80 to 340 K at photon energies hv = 1.24 to 2.6 eV. The data were analyzed using the Varshni relation [Physica 34, 149 (1967)] for the temperature dependence of semiconductor band gaps. The formula by Yang et al. [cf., e.g., J. Phys. Chem. Solids 65, 1015 (2004)] for the temperature dependence of the energy width of the Urbach absorption edge was also used.

UR - https://www.scopus.com/pages/publications/33644894749

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JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

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ER -

Temperature dependence of the energy gap of in_xSe_1-x compounds

Abstract

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