Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

J. Szuber

doi:10.1016/0040-6090(84)90458-9

Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10^-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level E_F was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

Original language	English
Pages (from-to)	309-312
Number of pages	4
Journal	Thin Solid Films
Volume	112
Issue number	4
DOIs	https://doi.org/10.1016/0040-6090(84)90458-9
Publication status	Published - 24 Feb 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(84)90458-9

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title = "Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen",

abstract = "Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.",

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AU - Szuber, J.

PY - 1984/2/24

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N2 - Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

AB - Surface photovoltage spectroscopy was used to investigate the distribution of electronic surface states in the forbidden gap of a GaAs(100) surface which had been thermally cleaned in an ultrahigh vacuum (2 × 10-7 Pa) at 800 K and subsequently covered with oxygen. A surface state band in the band gap below the Fermi level EF was observed on the clean surface. A new additional surface state band localized in the band gap above the valence band was observed after oxygen adsorption and was attributed to extrinsic oxygen-induced surface states.

UR - https://www.scopus.com/pages/publications/0021375356

U2 - 10.1016/0040-6090(84)90458-9

DO - 10.1016/0040-6090(84)90458-9

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AN - SCOPUS:0021375356

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ER -

Surface photovoltage spectroscopy investigation of the electronic properties of a GaAs(100) surface thermally cleaned in an ultrahigh vacuum and subsequently covered with oxygen

Abstract

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