Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

J. Szuber

doi:10.1016/0040-6090(84)90313-4

Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10^-4 Pa over the temperature range 500-700 K and of those exposed to O₂. The influence of both the annealing temperature and the O₂ adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level E_F and the top of the valence band was determined.

Original language	English
Pages (from-to)	27-31
Number of pages	5
Journal	Thin Solid Films
Volume	115
Issue number	1
DOIs	https://doi.org/10.1016/0040-6090(84)90313-4
Publication status	Published - 4 May 1984

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/0040-6090(84)90313-4

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title = "Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum",

abstract = "Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.",

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year = "1984",

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N2 - Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.

AB - Surface photovoltage spectroscopy was used to investigate the electronic properties of the real n-type Si(111) surfaces annealed in a high vacuum of 10-4 Pa over the temperature range 500-700 K and of those exposed to O2. The influence of both the annealing temperature and the O2 adsorption on the distance between the edge of the occupied surface state band located in the band gap below the Fermi level EF and the top of the valence band was determined.

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U2 - 10.1016/0040-6090(84)90313-4

DO - 10.1016/0040-6090(84)90313-4

M3 - Article

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JO - Thin Solid Films

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IS - 1

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Surface photovoltage investigations of the electronic properties of Si(111) surfaces annealed in high vacuum

Abstract

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