Abstract
The gas sensing and electrical properties of a novel toxic gas sensor structure based on n-InP epitaxial layer were studied. The gas sensing properties were investigated under extremely low concentration (in the ppb range) of toxic gas, nitrogen dioxide, in dry pure air. The sensor responses in terms of the resistance changes ΔR, towards NO 2 of the structures with different active InP layer thickness were compared. The influence of the surface states at InP surface on the initial resistance of the sensor structure was shown from numerical simulations.
| Original language | English |
|---|---|
| Pages (from-to) | 2281-2286 |
| Number of pages | 6 |
| Journal | Physica Status Solidi (A) Applications and Materials Science |
| Volume | 203 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Jul 2006 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry
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