Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments

M. Procek; T. Pustelny; A. Stolarczyk; E. Maciak

doi:10.2478/bpasts-2014-0069

Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments

Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO₂), hydrogen (H₂), ammonia (NH₃) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200C.

Original language	English
Pages (from-to)	635-639
Number of pages	5
Journal	Bulletin of the Polish Academy of Sciences: Technical Sciences
Volume	62
Issue number	4
DOIs	https://doi.org/10.2478/bpasts-2014-0069
Publication status	Published - 1 Dec 2014

Keywords

electric properties of semiconductors. Dedicated to Professor Jan Dorosz
flower-like nanostructures
gas sensor
wide gap semiconductors
zinc oxide (ZnO)

ASJC Scopus subject areas

Information Systems
Atomic and Molecular Physics, and Optics
General Engineering
Computer Networks and Communications
Artificial Intelligence

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10.2478/bpasts-2014-0069

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abstract = "The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200C.",

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AU - Procek, M.

AU - Pustelny, T.

AU - Stolarczyk, A.

AU - Maciak, E.

PY - 2014/12/1

Y1 - 2014/12/1

N2 - The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200C.

AB - The paper deals with the investigations concerning the influence of the changing gas environment on electrical resistance of zinc oxide (ZnO) nanostructures. The investigated structures are wide-gap semiconductors with the morphology of ZnO flower-shaped agglomerates of nanostructures. The resistance changes of these nanostructures were tested under the influence of various gases such as nitrogen dioxide (NO2), hydrogen (H2), ammonia (NH3) and also of humidity changes of carrier gases. To clarify the mechanisms of physicochemical processes in ZnO nanostructures during their interaction with gaseous environments, investigations were performed in two different carrier gases, viz. in synthetic air and in nitrogen. The study was carried out at a structure temperature of 200C.

KW - electric properties of semiconductors. Dedicated to Professor Jan Dorosz

KW - flower-like nanostructures

KW - gas sensor

KW - wide gap semiconductors

KW - zinc oxide (ZnO)

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JF - Bulletin of the Polish Academy of Sciences: Technical Sciences

IS - 4

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Studies of changes in electrical resistance of zinc oxide nanostructures under the influence of variable gaseous environments

Abstract

Keywords

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