Straty mocy i rezystancja zastępcza związane z przeładowywaniem nieliniowej pojemności wyjściowej tranzystora MOSFET

Zbigniew Kaczmarczyk; Michał Zellner; Krystian Frania

doi:10.15199/48.2018.03.10

Straty mocy i rezystancja zastępcza związane z przeładowywaniem nieliniowej pojemności wyjściowej tranzystora MOSFET

Translated title of the contribution: Power losses and equivalent resistance associated with cyclic charging and discharging of nonlinear output capacitance of MOSFET transistor

Department of Power Electronics, Electrical Drives and Robotics (RE/RE5)

Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The design of power electronic converters requires the proper selection of their active components - transistors. In the case of highfrequency resonant inverter applications, a significant group of parameters to be considered are MOSFET transistor parasitic parameters in the offstate - nonlinear output capacitance, power losses and equivalent resistance associated with its cyclic charging and discharging. The paper presents a new method of determining these power losses and equivalent resistance of MOSFET transistor in the off-state.

Translated title of the contribution	Power losses and equivalent resistance associated with cyclic charging and discharging of nonlinear output capacitance of MOSFET transistor
Original language	Polish
Pages (from-to)	55-59
Number of pages	5
Journal	Przeglad Elektrotechniczny
Volume	94
Issue number	3
DOIs	https://doi.org/10.15199/48.2018.03.10
Publication status	Published - 2018

ASJC Scopus subject areas

Electrical and Electronic Engineering

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@article{3e97931d2a444a1faa00c2e1b09bf95a,

title = "Straty mocy i rezystancja zast{\c e}pcza zwi{\c a}zane z prze{\l}adowywaniem nieliniowej pojemno{\'s}ci wyj{\'s}ciowej tranzystora MOSFET",

abstract = "The design of power electronic converters requires the proper selection of their active components - transistors. In the case of highfrequency resonant inverter applications, a significant group of parameters to be considered are MOSFET transistor parasitic parameters in the offstate - nonlinear output capacitance, power losses and equivalent resistance associated with its cyclic charging and discharging. The paper presents a new method of determining these power losses and equivalent resistance of MOSFET transistor in the off-state.",

keywords = "High-frequency, MOSFET transistors, Nonlinear capacitance, Power losses, Resonant inverters",

author = "Zbigniew Kaczmarczyk and Micha{\l} Zellner and Krystian Frania",

year = "2018",

doi = "10.15199/48.2018.03.10",

language = "polski",

volume = "94",

pages = "55--59",

journal = "Przeglad Elektrotechniczny",

issn = "0033-2097",

publisher = "Wydawnictwo SIGMA-NOT",

number = "3",

}

TY - JOUR

T1 - Straty mocy i rezystancja zastępcza związane z przeładowywaniem nieliniowej pojemności wyjściowej tranzystora MOSFET

AU - Kaczmarczyk, Zbigniew

AU - Zellner, Michał

AU - Frania, Krystian

PY - 2018

Y1 - 2018

N2 - The design of power electronic converters requires the proper selection of their active components - transistors. In the case of highfrequency resonant inverter applications, a significant group of parameters to be considered are MOSFET transistor parasitic parameters in the offstate - nonlinear output capacitance, power losses and equivalent resistance associated with its cyclic charging and discharging. The paper presents a new method of determining these power losses and equivalent resistance of MOSFET transistor in the off-state.

AB - The design of power electronic converters requires the proper selection of their active components - transistors. In the case of highfrequency resonant inverter applications, a significant group of parameters to be considered are MOSFET transistor parasitic parameters in the offstate - nonlinear output capacitance, power losses and equivalent resistance associated with its cyclic charging and discharging. The paper presents a new method of determining these power losses and equivalent resistance of MOSFET transistor in the off-state.

KW - High-frequency

KW - MOSFET transistors

KW - Nonlinear capacitance

KW - Power losses

KW - Resonant inverters

UR - https://www.scopus.com/pages/publications/85042883317

U2 - 10.15199/48.2018.03.10

DO - 10.15199/48.2018.03.10

M3 - Artykuł

AN - SCOPUS:85042883317

SN - 0033-2097

VL - 94

SP - 55

EP - 59

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 3

ER -

Straty mocy i rezystancja zastępcza związane z przeładowywaniem nieliniowej pojemności wyjściowej tranzystora MOSFET

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