Some comments on the photomagnetoelectric effect

S. Kończak; M. Nowak

doi:10.1016/0039-6028(79)90181-X

Some comments on the photomagnetoelectric effect

S. Kończak
, M. Nowak

Division of Solid State Physics (RIF/RIF1)

Silesian University of Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A generalization of the theory for the photomagnetoelectric effect (PME) is reported. Experimental quantities such as short circuit current, open circuit voltage and magnetoresistance are described as functions of carrier lifetime, surface velocities at the sample surfaces, electron and hole mobilities, electron and hole concentrations, absorption and quantum efficiency coefficients, intensity of light, magnetic field and sample dimensions. The results of numerical computation are also presented.

Original language	English
Pages (from-to)	228-238
Number of pages	11
Journal	Surface Science
Volume	87
Issue number	1
DOIs	https://doi.org/10.1016/0039-6028(79)90181-X
Publication status	Published - 1 Aug 1979

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(79)90181-X

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abstract = "A generalization of the theory for the photomagnetoelectric effect (PME) is reported. Experimental quantities such as short circuit current, open circuit voltage and magnetoresistance are described as functions of carrier lifetime, surface velocities at the sample surfaces, electron and hole mobilities, electron and hole concentrations, absorption and quantum efficiency coefficients, intensity of light, magnetic field and sample dimensions. The results of numerical computation are also presented.",

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AU - Kończak, S.

AU - Nowak, M.

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N2 - A generalization of the theory for the photomagnetoelectric effect (PME) is reported. Experimental quantities such as short circuit current, open circuit voltage and magnetoresistance are described as functions of carrier lifetime, surface velocities at the sample surfaces, electron and hole mobilities, electron and hole concentrations, absorption and quantum efficiency coefficients, intensity of light, magnetic field and sample dimensions. The results of numerical computation are also presented.

AB - A generalization of the theory for the photomagnetoelectric effect (PME) is reported. Experimental quantities such as short circuit current, open circuit voltage and magnetoresistance are described as functions of carrier lifetime, surface velocities at the sample surfaces, electron and hole mobilities, electron and hole concentrations, absorption and quantum efficiency coefficients, intensity of light, magnetic field and sample dimensions. The results of numerical computation are also presented.

UR - https://www.scopus.com/pages/publications/49249140368

U2 - 10.1016/0039-6028(79)90181-X

DO - 10.1016/0039-6028(79)90181-X

M3 - Article

AN - SCOPUS:49249140368

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VL - 87

SP - 228

EP - 238

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Some comments on the photomagnetoelectric effect

Abstract

ASJC Scopus subject areas

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