Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface

D. Lipa; J. Szuber

Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO₂(110) surface

D. Lipa
, J. Szuber

Department of Cybernetics, Nanotechnology and Data Processing (RAU/RAU10)

Silesian University of Technology

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electronic properties of the space charge layer of the clean and oxygen exposed SnO₂(110) surface have been analysed on the basis of the previously published results concerning the changes of the Fermi level position depending on the annealing temperature and oxygen exposure. Using the model of the differently ionised oxygen vacancies the correlations between recently reported values of the absolute band bending and electrical conductance were observed what was connected with the changes of the effective density of the filled electronic states localised in the band gap below the Fermi level E_F and in the upper part of the valence band.

Original language	English
Pages (from-to)	202-204
Number of pages	3
Journal	Electron Technology (Warsaw)
Volume	30
Issue number	2
Publication status	Published - 1997
Event	Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures - Kazimierz Dolny, Pol Duration: 18 Sept 1996 → 21 Sept 1996

ASJC Scopus subject areas

General Engineering

Cite this

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title = "Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface",

abstract = "Electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface have been analysed on the basis of the previously published results concerning the changes of the Fermi level position depending on the annealing temperature and oxygen exposure. Using the model of the differently ionised oxygen vacancies the correlations between recently reported values of the absolute band bending and electrical conductance were observed what was connected with the changes of the effective density of the filled electronic states localised in the band gap below the Fermi level EF and in the upper part of the valence band.",

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year = "1997",

language = "English",

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pages = "202--204",

journal = "Electron Technology (Warsaw)",

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publisher = "Institute of Electron Technology",

number = "2",

note = "Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures ; Conference date: 18-09-1996 Through 21-09-1996",

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T1 - Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface

AU - Lipa, D.

AU - Szuber, J.

PY - 1997

Y1 - 1997

N2 - Electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface have been analysed on the basis of the previously published results concerning the changes of the Fermi level position depending on the annealing temperature and oxygen exposure. Using the model of the differently ionised oxygen vacancies the correlations between recently reported values of the absolute band bending and electrical conductance were observed what was connected with the changes of the effective density of the filled electronic states localised in the band gap below the Fermi level EF and in the upper part of the valence band.

AB - Electronic properties of the space charge layer of the clean and oxygen exposed SnO2(110) surface have been analysed on the basis of the previously published results concerning the changes of the Fermi level position depending on the annealing temperature and oxygen exposure. Using the model of the differently ionised oxygen vacancies the correlations between recently reported values of the absolute band bending and electrical conductance were observed what was connected with the changes of the effective density of the filled electronic states localised in the band gap below the Fermi level EF and in the upper part of the valence band.

UR - https://www.scopus.com/pages/publications/0031366748

M3 - Conference article

AN - SCOPUS:0031366748

SN - 0070-9816

VL - 30

SP - 202

EP - 204

JO - Electron Technology (Warsaw)

JF - Electron Technology (Warsaw)

IS - 2

T2 - Proceedings of the 1996 4th Seminar on Surface and Thin Film Structures

Y2 - 18 September 1996 through 21 September 1996

ER -

Some comments on the electronic properties of the space charge layer of the clean and oxygen exposed SnO₂(110) surface

Abstract

ASJC Scopus subject areas

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