Rigorous analysis of the electronic properties of InP interfaces for gas sensing

B. Adamowicz; M. Miczek; C. Brun; B. Gruzza; H. Hasegawa

doi:10.1016/S0040-6090(03)00519-4

Rigorous analysis of the electronic properties of InP interfaces for gas sensing

B. Adamowicz
, M. Miczek
, C. Brun
, B. Gruzza
, H. Hasegawa

Division of Applied Physics (RIF/RIF3)

Silesian University of Technology
Université Clermont Auvergne
Hokkaido University

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

A theoretical analysis of the surface Fermi level position (E_FS) at n-InP interfaces with different surface state density (N_SS(E)) and surface fixed charge (Q_FC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of E_FS vs. the minimum surface state density N_SS0, the movement of E_FS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the E_FS sensitivity to the negative and positive Q_FC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

Original language	English
Pages (from-to)	101-106
Number of pages	6
Journal	Thin Solid Films
Volume	436
Issue number	1
DOIs	https://doi.org/10.1016/S0040-6090(03)00519-4
Publication status	Published - 22 Jul 2003
Event	Papers From The 3rd Seminar on SGS 2002 - Ustron, Poland Duration: 19 Sept 2002 → 22 Sept 2002

Keywords

Electronic properties
Fermi level
Gas sensing
InP
Interfaces
Surface states

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/S0040-6090(03)00519-4

Cite this

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title = "Rigorous analysis of the electronic properties of InP interfaces for gas sensing",

abstract = "A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.",

keywords = "Electronic properties, Fermi level, Gas sensing, InP, Interfaces, Surface states",

author = "B. Adamowicz and M. Miczek and C. Brun and B. Gruzza and H. Hasegawa",

year = "2003",

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day = "22",

doi = "10.1016/S0040-6090(03)00519-4",

language = "English",

volume = "436",

pages = "101--106",

journal = "Thin Solid Films",

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number = "1",

note = "Papers From The 3rd Seminar on SGS 2002 ; Conference date: 19-09-2002 Through 22-09-2002",

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TY - JOUR

T1 - Rigorous analysis of the electronic properties of InP interfaces for gas sensing

AU - Adamowicz, B.

AU - Miczek, M.

AU - Brun, C.

AU - Gruzza, B.

AU - Hasegawa, H.

PY - 2003/7/22

Y1 - 2003/7/22

N2 - A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

AB - A theoretical analysis of the surface Fermi level position (EFS) at n-InP interfaces with different surface state density (NSS(E)) and surface fixed charge (QFC) representing adsorbed ions or surface δ-doping has been performed in order to understand the InP-based gas sensor behaviour. Furthermore, the in-depth profiles of the potential barrier in equilibrium and under illumination (surface photovoltage) have been rigorously calculated. A U-shaped interface state continuum has been assumed in accordance with the Disorder Induced Gap State model. From the simulated dependencies of EFS vs. the minimum surface state density NSS0, the movement of EFS in the energy band gap as well as its pinning position have been investigated. In addition, the analysis of the EFS sensitivity to the negative and positive QFC has revealed the remarkable charge detection sensitivity of InP interfaces within different dynamic ranges.

KW - Electronic properties

KW - Fermi level

KW - Gas sensing

KW - InP

KW - Interfaces

KW - Surface states

UR - https://www.scopus.com/pages/publications/0038717100

U2 - 10.1016/S0040-6090(03)00519-4

DO - 10.1016/S0040-6090(03)00519-4

M3 - Conference article

AN - SCOPUS:0038717100

SN - 0040-6090

VL - 436

SP - 101

EP - 106

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

T2 - Papers From The 3rd Seminar on SGS 2002

Y2 - 19 September 2002 through 22 September 2002

ER -

Rigorous analysis of the electronic properties of InP interfaces for gas sensing

Abstract

Keywords

ASJC Scopus subject areas

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