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Response to oxygen and chemical properties of SnO2 thin-film gas sensors

  • Institute of Physics
  • High-Tech International Services

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The measurements of the response-in terms of the conductance changes-to oxygen adsorption of tin dioxide (SnO2) thin-film-based gas sensors were performed. The sensing SnO2 layers were obtained by means of the rheotaxial growth and thermal oxidation (RGTO) method. The sensor responses were measured under a dry gas flow containing oxygen in nitrogen, within the range of temperature from 25 to 540 °C. For comparison, similar studies were performed for a commercial SnO2 thick-film (TGS 812) gas sensor. The in-depth profiles of the chemical composition of the RGTO SnO2 layers were determined from the scanning Auger microprobe experiment. The changes in concentration ratios [O]/[Sn] and [C]/[Sn] from the near-surface region towards the grain bulk were shown.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalVacuum
Volume82
Issue number10
DOIs
Publication statusPublished - 3 Jun 2008

Keywords

  • Auger electron spectroscopy
  • Oxygen adsorption
  • RGTO technique
  • Solid-state gas sensors
  • Surface electronic properties
  • Tin dioxide

ASJC Scopus subject areas

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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