Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

Krzysztof Przybyła; Marcin Kasprzak

doi:10.15199/48.2020.07.12

Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

Translated title of the contribution: Comparison of 13.56 MHz band class DE inverters built with SiC MOSFET and GaN FET transistors)

Department of Power Electronics, Electrical Drives and Robotics (RE/RE5)

Research output: Contribution to journal › Article › peer-review

Abstract

Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)% and (70-80)% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.

Translated title of the contribution	Comparison of 13.56 MHz band class DE inverters built with SiC MOSFET and GaN FET transistors)
Original language	Polish
Pages (from-to)	68-71
Number of pages	4
Journal	Przeglad Elektrotechniczny
Volume	96
Issue number	7
DOIs	https://doi.org/10.15199/48.2020.07.12
Publication status	Published - 2020

ASJC Scopus subject areas

Electrical and Electronic Engineering

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title = "Por{\'o}wnanie falownik{\'o}w klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET",

abstract = "Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)\% and (70-80)\% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.",

keywords = "Class DE inverter, Driver, GaN, High frequency, MOSFET, SiC",

author = "Krzysztof Przyby{\l}a and Marcin Kasprzak",

year = "2020",

doi = "10.15199/48.2020.07.12",

language = "polski",

volume = "96",

pages = "68--71",

journal = "Przeglad Elektrotechniczny",

issn = "0033-2097",

publisher = "Wydawnictwo SIGMA-NOT",

number = "7",

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TY - JOUR

T1 - Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

AU - Przybyła, Krzysztof

AU - Kasprzak, Marcin

PY - 2020

Y1 - 2020

N2 - Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)% and (70-80)% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.

AB - Efficiency measurement results of the four inverters with output power up to 450W, built with SiC (2x) and GaN (2x) transistors are presented in the paper. Used transistors were in (650-900)V voltage class, (20-30)A current class, (TO-220, TO-247) THT cases and (e.g. D2PAK-7) SMD cases. The research has shown that GaN and SiC transistors allow to obtain total efficiency of (89-92)% and (70-80)% respectively. The obtained efficiency results of the inverters with GaN transistors are higher than similar inverters with the best Si RF MOSFETs.

KW - Class DE inverter

KW - Driver

KW - GaN

KW - High frequency

KW - MOSFET

KW - SiC

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DO - 10.15199/48.2020.07.12

M3 - Artykuł

AN - SCOPUS:85090952967

SN - 0033-2097

VL - 96

SP - 68

EP - 71

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 7

ER -

Porównanie falowników klasy DE z pasma 13,56 MHz zbudowanych na tranzystorach SiC MOSFET i GaN FET

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