Abstract
Comparison results of 300 kHz, 20 kW Class D-ZVS inverters are presented in the paper. Inverters were based on CAS120M12BM2 (SiC, 138 A) transistor and 5 parallel placed IXFN 44N80P (Si, 5x25 A) transistors. The inverter with SiC MOSFET in comparison with 5xSi MOSFET achieves (8-26)% higher output power, higher efficiency by 2% and gate circuit power losses are 2.5 times lower. The parallel placement of several Si MOSFET transistors is acceptable in the inverter of high power, 20 kW or more.
| Translated title of the contribution | Comparison of 300 kHz Class D-ZVS inverters for induction heating with MOSFET transistors based on Si and SiC |
|---|---|
| Original language | Polish |
| Pages (from-to) | 60-64 |
| Number of pages | 5 |
| Journal | Przeglad Elektrotechniczny |
| Volume | 94 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2018 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
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