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Optical properties of SbSI heterostructures

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Citations (Scopus)

Abstract

The antimony sulfoiodide (SbSI) single crystal being a ferroelectric semiconductor has a large number of interesting properties. Based on SbSI single crystal a new type of heterostructures has been produced. For the first time diodes, transistors and thyristors composed of SbSI/Sb2S3 heterojunctions have been fabricated by CO2 laser irradiation of selected sections of SbSI single crystals. Treated sections are composed of amorphous antimony (III) sulphide (Sb2S3) with energy gap 0.3 eV smaller (in room temperature) than that of SbSI. The structural optical, electrical and photoelectrical characteristics of produced devices have been investigated.

Original languageEnglish
Title of host publicationPhotonic Fiber and Crystal Devices
Subtitle of host publicationAdvances in Materials and Innovations in Device Applications VI
DOIs
Publication statusPublished - 2012
EventPhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI - San Diego, CA, United States
Duration: 12 Aug 2012 → 13 Aug 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8497
ISSN (Print)0277-786X

Conference

ConferencePhotonic Fiber and Crystal Devices: Advances in Materials and Innovations in Device Applications VI
Country/TerritoryUnited States
CitySan Diego, CA
Period12/08/12 → 13/08/12

Keywords

  • Antimony sulfoiodide
  • Heterojunctions
  • Heterostructures
  • Laser processing
  • Photoelectric properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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