Optical identification of crystal defects in CCD matrix

Adam Popowicz

Optical identification of crystal defects in CCD matrix

Adam Popowicz

Department of Electronics; Electrical Engineering and Microelectronics (RAU/RAU11)

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two groups: the point defects and the spatial defects (dislocations). During the experiments it was proven that the type of defect affects the behavior of the dark current generation during the light gathering.

Translated title of the contribution	Identyfikacja defektów struktury krystalicznej matryce CCD
Original language	English
Pages (from-to)	79-82
Number of pages	4
Journal	Przeglad Elektrotechniczny
Volume	89
Issue number	3 A
Publication status	Published - 2013

Keywords

CCD matrix
Dark current
Semiconductor defects

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

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title = "Optical identification of crystal defects in CCD matrix",

abstract = "An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two groups: the point defects and the spatial defects (dislocations). During the experiments it was proven that the type of defect affects the behavior of the dark current generation during the light gathering.",

keywords = "CCD matrix, Dark current, Semiconductor defects",

author = "Adam Popowicz",

year = "2013",

language = "English",

volume = "89",

pages = "79--82",

journal = "Przeglad Elektrotechniczny",

issn = "0033-2097",

publisher = "Wydawnictwo SIGMA-NOT",

number = "3 A",

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TY - JOUR

T1 - Optical identification of crystal defects in CCD matrix

AU - Popowicz, Adam

PY - 2013

Y1 - 2013

N2 - An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two groups: the point defects and the spatial defects (dislocations). During the experiments it was proven that the type of defect affects the behavior of the dark current generation during the light gathering.

AB - An original idea of semiconductor defects identification in CCD matrix was presented in the article. The procedure is simple and easy to execute because of no need for special and expensive equipment. The method classifies defects into two groups: the point defects and the spatial defects (dislocations). During the experiments it was proven that the type of defect affects the behavior of the dark current generation during the light gathering.

KW - CCD matrix

KW - Dark current

KW - Semiconductor defects

UR - https://www.scopus.com/pages/publications/84874628081

M3 - Article

AN - SCOPUS:84874628081

SN - 0033-2097

VL - 89

SP - 79

EP - 82

JO - Przeglad Elektrotechniczny

JF - Przeglad Elektrotechniczny

IS - 3 A

ER -

Optical identification of crystal defects in CCD matrix

Abstract

Keywords

ASJC Scopus subject areas

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